Magnetoresistance oscillations up to 32 K in the organic metal β″-(ET)4(H3O)[Fe(C2O4)3] · C6H4Cl2

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Quantum oscillations in the linear chain of coupled orbits: the organic metal with two cation layers θ-(ET)4CoBr4(C6H4Cl2)

Analytical formulae for de Haas-van Alphen (dHvA) oscillations in linear chain of coupled two-dimensional (2D) orbits (Pippard’s model) are derived systematically taking into account the chemical potential oscillations in magnetic field. Although corrective terms are observed, basic (α) and magnetic breakdown-induced (β and 2β α) orbits can be accounted for by the LifshitsKosevich (LK) and Fali...

متن کامل

Violation of Kohler’s rule by the magnetoresistance of a quasi-two-dimensional organic metal

The interlayer magnetoresistance of the quasi-two-dimensional metal a-~BEDT-TTF!2KHg~SCN!4 is considered. In the temperature range from 0.5 to 10 K and for fields up to 10 T the magnetoresistance has a stronger temperature dependence than the zero-field resistance. Consequently Kohler’s rule is not obeyed for any range of temperatures or fields. This means that the magnetoresistance cannot be d...

متن کامل

Giant magnetoresistance in organic spin valves.

Interfacial diffusion between magnetic electrodes and organic spacer layers is a serious problem in the organic spintronics which complicates attempts to understand the spin-dependent transport mechanism and hurts the achievement of a desirably high magnetoresistance (MR). We deposit nanodots instead of atoms onto the organic layer using buffer layer assist growth. Spin valves using this method...

متن کامل

Anisotropic magnetoresistance and anisotropic tunneling magnetoresistance due to quantum interference in ferromagnetic metal break junctions.

We measure the low-temperature resistance of permalloy break junctions as a function of contact size and the magnetic field angle in applied fields large enough to saturate the magnetization. For both nanometer-scale metallic contacts and tunneling devices we observe large changes in resistance with the angle, as large as 25% in the tunneling regime. The pattern of magnetoresistance is sensitiv...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Low Temperature Physics

سال: 2011

ISSN: 1063-777X,1090-6517

DOI: 10.1063/1.3670033